中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Linear and nonlinear electron transport in modulation-doped AlGaN/GaN heterostructures

文献类型:期刊论文

作者Cao, JC ; Yao, W
刊名JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
出版日期2004
卷号43期号:1页码:50-53
关键词MONTE-CARLO CALCULATION WURTZITE GAN IMPACT IONIZATION BULK ZINCBLENDE GALLIUM NITRIDE
ISSN号0021-4922
通讯作者Cao, JC, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat & Informat, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题Physics, Applied
收录类别SCI
语种英语
公开日期2011-12-17
源URL[http://ir.sim.ac.cn/handle/331004/37395]  
专题上海微系统与信息技术研究所_太赫兹、微波射频技术_期刊论文
推荐引用方式
GB/T 7714
Cao, JC,Yao, W. Linear and nonlinear electron transport in modulation-doped AlGaN/GaN heterostructures[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,2004,43(1):50-53.
APA Cao, JC,&Yao, W.(2004).Linear and nonlinear electron transport in modulation-doped AlGaN/GaN heterostructures.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,43(1),50-53.
MLA Cao, JC,et al."Linear and nonlinear electron transport in modulation-doped AlGaN/GaN heterostructures".JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 43.1(2004):50-53.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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