Linear and nonlinear electron transport in modulation-doped AlGaN/GaN heterostructures
文献类型:期刊论文
作者 | Cao, JC ; Yao, W |
刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
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出版日期 | 2004 |
卷号 | 43期号:1页码:50-53 |
关键词 | MONTE-CARLO CALCULATION WURTZITE GAN IMPACT IONIZATION BULK ZINCBLENDE GALLIUM NITRIDE |
ISSN号 | 0021-4922 |
通讯作者 | Cao, JC, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat & Informat, 865 Changning Rd, Shanghai 200050, Peoples R China |
学科主题 | Physics, Applied |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2011-12-17 |
源URL | [http://ir.sim.ac.cn/handle/331004/37395] ![]() |
专题 | 上海微系统与信息技术研究所_太赫兹、微波射频技术_期刊论文 |
推荐引用方式 GB/T 7714 | Cao, JC,Yao, W. Linear and nonlinear electron transport in modulation-doped AlGaN/GaN heterostructures[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,2004,43(1):50-53. |
APA | Cao, JC,&Yao, W.(2004).Linear and nonlinear electron transport in modulation-doped AlGaN/GaN heterostructures.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,43(1),50-53. |
MLA | Cao, JC,et al."Linear and nonlinear electron transport in modulation-doped AlGaN/GaN heterostructures".JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 43.1(2004):50-53. |
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