中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Absorption of intense terahertz radiation in InAs/AlSb heterojunctions

文献类型:期刊论文

作者Cao, JC ; Lei, XL
刊名COMMAD 2002 PROCEEDINGS
出版日期2002
页码471-474
关键词BALANCE-EQUATION APPROACH HOT-ELECTRON TRANSPORT IMPACT IONIZATION SEMICONDUCTOR SUPERLATTICES FIELD OSCILLATORS FREQUENCY MINIBAND DRIVEN
通讯作者Cao, JC, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Optics; Physics, Applied; Physics, Condensed Matter
收录类别SCI
语种英语
公开日期2011-12-17
源URL[http://ir.sim.ac.cn/handle/331004/37405]  
专题上海微系统与信息技术研究所_太赫兹、微波射频技术_期刊论文
推荐引用方式
GB/T 7714
Cao, JC,Lei, XL. Absorption of intense terahertz radiation in InAs/AlSb heterojunctions[J]. COMMAD 2002 PROCEEDINGS,2002:471-474.
APA Cao, JC,&Lei, XL.(2002).Absorption of intense terahertz radiation in InAs/AlSb heterojunctions.COMMAD 2002 PROCEEDINGS,471-474.
MLA Cao, JC,et al."Absorption of intense terahertz radiation in InAs/AlSb heterojunctions".COMMAD 2002 PROCEEDINGS (2002):471-474.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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