中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Hot-electron dynamics and terahertz generation in GaN quantum wells in the streaming transport regime

文献类型:期刊论文

作者Lu,JT ; Cao,JC ; Feng,SL
刊名PHYSICAL REVIEW B
出版日期2006
卷号73期号:19页码:195326-195326
关键词MONTE-CARLO-SIMULATION TRANSIT-TIME RESONANCE GROUP-III NITRIDES 2-DIMENSIONAL ELECTRONS PHONON-SCATTERING BULK GAN MOBILITY HETEROSTRUCTURES SEMICONDUCTORS FIELD
ISSN号1098-0121
通讯作者Lu, JT, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题Physics ; Condensed Matter
收录类别SCI
公开日期2011-12-17
源URL[http://ir.sim.ac.cn/handle/331004/39043]  
专题上海微系统与信息技术研究所_太赫兹、微波射频技术_期刊论文
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GB/T 7714
Lu,JT,Cao,JC,Feng,SL. Hot-electron dynamics and terahertz generation in GaN quantum wells in the streaming transport regime[J]. PHYSICAL REVIEW B,2006,73(19):195326-195326.
APA Lu,JT,Cao,JC,&Feng,SL.(2006).Hot-electron dynamics and terahertz generation in GaN quantum wells in the streaming transport regime.PHYSICAL REVIEW B,73(19),195326-195326.
MLA Lu,JT,et al."Hot-electron dynamics and terahertz generation in GaN quantum wells in the streaming transport regime".PHYSICAL REVIEW B 73.19(2006):195326-195326.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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