A fully spin-polarized two-dimensional free electron gas induced in narrow diluted magnetic semiconductor quantum wells by in-plane magnetic fields
文献类型:期刊论文
作者 | Guo,XG ; Cao,JC |
刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
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出版日期 | 2006 |
卷号 | 21期号:3页码:341-345 |
关键词 | FARADAY-ROTATION BAND OFFSETS |
ISSN号 | 0268-1242 |
通讯作者 | Guo, XG, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China |
学科主题 | Engineering ; Electrical & Electronic; Materials Science ; Multidisciplinary; Physics ; Condensed Matter |
收录类别 | SCI |
公开日期 | 2011-12-17 |
源URL | [http://ir.sim.ac.cn/handle/331004/39053] ![]() |
专题 | 上海微系统与信息技术研究所_太赫兹、微波射频技术_期刊论文 |
推荐引用方式 GB/T 7714 | Guo,XG,Cao,JC. A fully spin-polarized two-dimensional free electron gas induced in narrow diluted magnetic semiconductor quantum wells by in-plane magnetic fields[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2006,21(3):341-345. |
APA | Guo,XG,&Cao,JC.(2006).A fully spin-polarized two-dimensional free electron gas induced in narrow diluted magnetic semiconductor quantum wells by in-plane magnetic fields.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,21(3),341-345. |
MLA | Guo,XG,et al."A fully spin-polarized two-dimensional free electron gas induced in narrow diluted magnetic semiconductor quantum wells by in-plane magnetic fields".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 21.3(2006):341-345. |
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