中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
A fully spin-polarized two-dimensional free electron gas induced in narrow diluted magnetic semiconductor quantum wells by in-plane magnetic fields

文献类型:期刊论文

作者Guo,XG ; Cao,JC
刊名SEMICONDUCTOR SCIENCE AND TECHNOLOGY
出版日期2006
卷号21期号:3页码:341-345
关键词FARADAY-ROTATION BAND OFFSETS
ISSN号0268-1242
通讯作者Guo, XG, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题Engineering ; Electrical & Electronic; Materials Science ; Multidisciplinary; Physics ; Condensed Matter
收录类别SCI
公开日期2011-12-17
源URL[http://ir.sim.ac.cn/handle/331004/39053]  
专题上海微系统与信息技术研究所_太赫兹、微波射频技术_期刊论文
推荐引用方式
GB/T 7714
Guo,XG,Cao,JC. A fully spin-polarized two-dimensional free electron gas induced in narrow diluted magnetic semiconductor quantum wells by in-plane magnetic fields[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2006,21(3):341-345.
APA Guo,XG,&Cao,JC.(2006).A fully spin-polarized two-dimensional free electron gas induced in narrow diluted magnetic semiconductor quantum wells by in-plane magnetic fields.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,21(3),341-345.
MLA Guo,XG,et al."A fully spin-polarized two-dimensional free electron gas induced in narrow diluted magnetic semiconductor quantum wells by in-plane magnetic fields".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 21.3(2006):341-345.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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