Dynamical instability and switching of resonant tunneling device under terahertz radiation
文献类型：期刊论文
| 作者 | Zhang,YH ; Cao,JC ; Feng,SL ; Liu,HC |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2005 |
| 卷号 | 98期号:3页码:33718-33718 |
| 关键词 | QUANTUM-BASED DEVICES SEMICONDUCTOR-HETEROSTRUCTURE BISTABILITY DIODES OSCILLATIONS SIMULATION TRANSPORT MODEL LASER |
| ISSN号 | 0021-8979 |
| 通讯作者 | Cao, JC, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Physics ; Applied |
| 收录类别 | SCI |
| 公开日期 | 2011-12-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/39083]  |
| 专题 | 上海微系统与信息技术研究所_太赫兹、微波射频技术_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang,YH,Cao,JC,Feng,SL,et al. Dynamical instability and switching of resonant tunneling device under terahertz radiation[J]. JOURNAL OF APPLIED PHYSICS,2005,98(3):33718-33718. |
| APA | Zhang,YH,Cao,JC,Feng,SL,&Liu,HC.(2005).Dynamical instability and switching of resonant tunneling device under terahertz radiation.JOURNAL OF APPLIED PHYSICS,98(3),33718-33718. |
| MLA | Zhang,YH,et al."Dynamical instability and switching of resonant tunneling device under terahertz radiation".JOURNAL OF APPLIED PHYSICS 98.3(2005):33718-33718. |
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