Nitrogen-implanted Ge2Sb2Te5 film used as multilevel storage media for phase change random access memory
文献类型：期刊论文
| 作者 | Liu, B ; Zhang, T ; Xia, JL ; Song, ZT ; Feng, SL ; Chen, B |
| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
 |
| 出版日期 | 2004 |
| 卷号 | 19期号:6页码:L61-L64 |
| 关键词 | AMORPHOUS THIN-FILMS TELLURIDE GLASSES NONVOLATILE TRANSITION SEMICONDUCTORS GE20TE80-XBIX |
| ISSN号 | 0268-1242 |
| 通讯作者 | Liu, B, Chinese Acad Sci, Res Ctr Funct Semicond Film Engn & Technol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2011-12-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/37231]  |
| 专题 | 上海微系统与信息技术研究所_新能源技术_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, B,Zhang, T,Xia, JL,et al. Nitrogen-implanted Ge2Sb2Te5 film used as multilevel storage media for phase change random access memory[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2004,19(6):L61-L64. |
| APA | Liu, B,Zhang, T,Xia, JL,Song, ZT,Feng, SL,&Chen, B.(2004).Nitrogen-implanted Ge2Sb2Te5 film used as multilevel storage media for phase change random access memory.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,19(6),L61-L64. |
| MLA | Liu, B,et al."Nitrogen-implanted Ge2Sb2Te5 film used as multilevel storage media for phase change random access memory".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 19.6(2004):L61-L64. |
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