Study of high-field electron transport in semiconductors using balance equations for nonparabolic multivalley systems
文献类型:期刊论文
作者 | Lei, XL ; Cao, JC ; Dong, B |
刊名 | JOURNAL OF APPLIED PHYSICS
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出版日期 | 1996 |
卷号 | 80期号:3页码:1504-1509 |
关键词 | BLOCH ELECTRONS DRIFT VELOCITY BAND-STRUCTURE ENERGY-BAND SILICON MODEL GAAS |
ISSN号 | 0021-8979 |
通讯作者 | Lei, XL, CHINA CTR ADV SCI & TECHNOL,WORLD LAB,POB 8730,BEIJING 100080,PEOPLES R CHINA |
学科主题 | Physics, Applied |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2011-12-17 |
源URL | [http://ir.sim.ac.cn/handle/331004/34580] ![]() |
专题 | 上海微系统与信息技术研究所_无线、宽带、通讯技术_期刊论文 |
推荐引用方式 GB/T 7714 | Lei, XL,Cao, JC,Dong, B. Study of high-field electron transport in semiconductors using balance equations for nonparabolic multivalley systems[J]. JOURNAL OF APPLIED PHYSICS,1996,80(3):1504-1509. |
APA | Lei, XL,Cao, JC,&Dong, B.(1996).Study of high-field electron transport in semiconductors using balance equations for nonparabolic multivalley systems.JOURNAL OF APPLIED PHYSICS,80(3),1504-1509. |
MLA | Lei, XL,et al."Study of high-field electron transport in semiconductors using balance equations for nonparabolic multivalley systems".JOURNAL OF APPLIED PHYSICS 80.3(1996):1504-1509. |
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