Carrier transport simulation for bulk AlxGa1-xAs with a Gamma-L-X band structure based on Lei-Ting balance equations
文献类型：期刊论文
| 作者 | Cao, JC ; Lei, XL |
| 刊名 | SOLID-STATE ELECTRONICS
 |
| 出版日期 | 1996 |
| 卷号 | 39期号:7页码:971-975 |
| 关键词 | HOT-ELECTRON TRANSPORT FIELD GAAS SEMICONDUCTORS |
| ISSN号 | 0038-1101 |
| 通讯作者 | Cao, JC, CHINESE ACAD SCI,SHANGHAI INST MET,STATE KEY LAB FUNCT MAT INFORMAT,865 CHANGNING RD,SHANGHAI 200050,PEOPLES R CHINA |
| 学科主题 | Engineering, Electrical & Electronic; Physics, Applied; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2011-12-17 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/34582]  |
| 专题 | 上海微系统与信息技术研究所_无线、宽带、通讯技术_期刊论文 |
| 推荐引用方式 GB/T 7714 | Cao, JC,Lei, XL. Carrier transport simulation for bulk AlxGa1-xAs with a Gamma-L-X band structure based on Lei-Ting balance equations[J]. SOLID-STATE ELECTRONICS,1996,39(7):971-975. |
| APA | Cao, JC,&Lei, XL.(1996).Carrier transport simulation for bulk AlxGa1-xAs with a Gamma-L-X band structure based on Lei-Ting balance equations.SOLID-STATE ELECTRONICS,39(7),971-975. |
| MLA | Cao, JC,et al."Carrier transport simulation for bulk AlxGa1-xAs with a Gamma-L-X band structure based on Lei-Ting balance equations".SOLID-STATE ELECTRONICS 39.7(1996):971-975. |
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