Spatial hole burning degradation of AlGaAs/GaAs laser diodes
文献类型：期刊论文
| ; | |
| 作者 | Qiao YB; Feng SW; Xiong C; Wang XW; Ma XY; Zhu H; Wei GH; Feng, SW (reprint author), Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing, Peoples R China, shwfeng@bjut.edu.cn |
| 刊名 | applied physics letters
 ; APPLIED PHYSICS LETTERS
|
| 出版日期 | 2011 ; 2011 |
| 卷号 | 99期号:10页码:103506 |
| 关键词 | FACETS OPERATION Facets Operation |
| ISSN号 | 0003-6951 ; 0003-6951 |
| 通讯作者 | feng, sw (reprint author), beijing univ technol, sch elect informat & control engn, beijing, peoples r china, shwfeng@bjut.edu.cn |
| 英文摘要 | The degradation of AlGaAs/GaAs laser diodes is studied in detail using laser scanning confocal microscopy, cathodoluminescence images, and x-ray diffraction (XRD) techniques. Our analysis has identified a degradation mechanism that results from the periodic distribution of the carrier density and the near-field intensity originating from periodic spatial hole burning. Based on the XRD measurements, we find that the epitaxial layer enters a polycrystalline phase during degradation due to the dark line defects, and the out-of-plane strain and in-plane compressive stress are induced by degradation. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3634051] |
| 学科主题 | 光电子学 ; 光电子学 |
| 收录类别 | SCI |
| 资助信息 | high-tech research and development program of china (863 program)[2009aa032704]; beijing natural science foundation, china[4092005] |
| 语种 | 英语 ; 英语 |
| 资助机构 | High-tech Research and Development Program of China (863 Program)[2009AA032704]; Beijing Natural Science Foundation, China[4092005] |
| 公开日期 | 2012-01-06 ; 2012-01-06 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22727]  |
| 专题 | 半导体研究所_光电子研究发展中心 |
| 通讯作者 | Feng, SW (reprint author), Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing, Peoples R China, shwfeng@bjut.edu.cn |
| 推荐引用方式 GB/T 7714 | Qiao YB,Feng SW,Xiong C,et al. Spatial hole burning degradation of AlGaAs/GaAs laser diodes, Spatial hole burning degradation of AlGaAs/GaAs laser diodes[J]. applied physics letters, APPLIED PHYSICS LETTERS,2011, 2011,99, 99(10):103506, 103506. |
| APA | Qiao YB.,Feng SW.,Xiong C.,Wang XW.,Ma XY.,...&Feng, SW .(2011).Spatial hole burning degradation of AlGaAs/GaAs laser diodes.applied physics letters,99(10),103506. |
| MLA | Qiao YB,et al."Spatial hole burning degradation of AlGaAs/GaAs laser diodes".applied physics letters 99.10(2011):103506. |
入库方式： OAI收割
来源：半导体研究所
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