Comparison of as-grown and annealed GaN/InGaN:Mg samples
文献类型：期刊论文
| 作者 | Deng QW ; Wang XL ; Xiao HL ; Wang CM ; Yin HB ; Chen H ; Lin DF ; Jiang LJ ; Feng C ; Li JM ; Wang ZG ; Hou X |
| 刊名 | journal of physics d-applied physics
 |
| 出版日期 | 2011 |
| 卷号 | 44期号:34页码:345101 |
| 关键词 | LIGHT-EMITTING-DIODES VAPOR-PHASE EPITAXY BAND-GAP MG PHOTOLUMINESCENCE INGAN DEPENDENCE STRAIN ENERGY INN |
| ISSN号 | 0022-3727 |
| 通讯作者 | deng, qw (reprint author), chinese acad sci, inst semicond, ctr mat sci, pob 912, beijing 100083, peoples r china, daven@semi.ac.cn |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | knowledge innovation engineering of chinese academy of sciences[yyyj-0701-02]; national nature sciences foundation of china[60890193, 60906006]; state key development program for basic research of china[2006cb604905, 2010cb327503]; chinese academy of sciences[iscas2008t01, iscas2009l01, iscas2009l02] |
| 语种 | 英语 |
| 公开日期 | 2012-01-06 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22653]  |
| 专题 | 半导体研究所_半导体材料科学中心 |
| 推荐引用方式 GB/T 7714 | Deng QW,Wang XL,Xiao HL,et al. Comparison of as-grown and annealed GaN/InGaN:Mg samples[J]. journal of physics d-applied physics,2011,44(34):345101. |
| APA | Deng QW.,Wang XL.,Xiao HL.,Wang CM.,Yin HB.,...&Hou X.(2011).Comparison of as-grown and annealed GaN/InGaN:Mg samples.journal of physics d-applied physics,44(34),345101. |
| MLA | Deng QW,et al."Comparison of as-grown and annealed GaN/InGaN:Mg samples".journal of physics d-applied physics 44.34(2011):345101. |
入库方式： OAI收割
来源：半导体研究所
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