Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1)
文献类型：期刊论文
| 作者 | Wei, M ; Wang, XL ; Pan, X ; Xiao, HL ; Wang, CM ; Hou, QF ; Wang, ZG |
| 刊名 | materials science in semiconductor processing
 |
| 出版日期 | 2011 |
| 卷号 | 14期号:2页码:97-100 |
| 关键词 | GaN MOCVD Si(111) AlN VAPOR-PHASE EPITAXY LAYERS SUBSTRATE MOCVD STRESS |
| ISSN号 | 1369-8001 |
| 通讯作者 | wei, m (reprint author), chinese acad sci, inst semicond, mat sci ctr, pob 912, beijing 100083, peoples r china，mengw@semi.ac.cn |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | knowledge innovation engineering of chinese academy of sciences[yyyj-0701-02]; national nature sciences foundation of china[60890193, 60906006]; state key development program for basic research of china[2006cb604905, 2010cb327503]; chinese academy of sciences[iscas2008t01, iscas2009l01, iscas2009l02] |
| 语种 | 英语 |
| 公开日期 | 2012-01-06 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22655]  |
| 专题 | 半导体研究所_半导体材料科学中心 |
| 推荐引用方式 GB/T 7714 | Wei, M,Wang, XL,Pan, X,et al. Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1)[J]. materials science in semiconductor processing,2011,14(2):97-100. |
| APA | Wei, M.,Wang, XL.,Pan, X.,Xiao, HL.,Wang, CM.,...&Wang, ZG.(2011).Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1).materials science in semiconductor processing,14(2),97-100. |
| MLA | Wei, M,et al."Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1)".materials science in semiconductor processing 14.2(2011):97-100. |
入库方式： OAI收割
来源：半导体研究所
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