The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure
文献类型：期刊论文
| 作者 | Bi Y ; Wang XL ; Xiao HL ; Wang CM ; Peng EC ; Lin DF ; Feng C ; Jiang LJ |
| 刊名 | european physical journal-applied physics
 |
| 出版日期 | 2011 |
| 卷号 | 55期号:1页码:10102 |
| 关键词 | ALGAN/GAN/INGAN/GAN DH-HEMTS FIELD-EFFECT TRANSISTORS ALGAN/GAN POLARIZATION PASSIVATION HFETS GHZ |
| ISSN号 | 1286-0042 |
| 通讯作者 | bi, y (reprint author), chinese acad sci, inst semicond, ctr mat sci, pob 912, beijing 100083, peoples r china, ybi@semi.ac.cn |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | knowledge innovation engineering of chinese academy of sciences[yyyj-0701-02]; national nature sciences foundation of china[60890193, 60906006]; state key development program for basic research of china[2006cb604905, 2010cb327503]; chinese academy of sciences[iscas2008t01, iscas2009l01, iscas2009l02] |
| 语种 | 英语 |
| 公开日期 | 2012-01-06 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22663]  |
| 专题 | 半导体研究所_半导体材料科学中心 |
| 推荐引用方式 GB/T 7714 | Bi Y,Wang XL,Xiao HL,et al. The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure[J]. european physical journal-applied physics,2011,55(1):10102. |
| APA | Bi Y.,Wang XL.,Xiao HL.,Wang CM.,Peng EC.,...&Jiang LJ.(2011).The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure.european physical journal-applied physics,55(1),10102. |
| MLA | Bi Y,et al."The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure".european physical journal-applied physics 55.1(2011):10102. |
入库方式： OAI收割
来源：半导体研究所
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