Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation
文献类型：期刊论文
| ; | |
| 作者 | Ning JQ; Xu SJ; Ruan XZ; Ji Y; Zheng HZ; Sheng WD; Liu HC; Ning, JQ (reprint author), Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China, sjxu@hkucc.hku.hk |
| 刊名 | journal of applied physics
 ; JOURNAL OF APPLIED PHYSICS
|
| 出版日期 | 2011 ; 2011 |
| 卷号 | 110期号:5页码:54320 |
| 关键词 | WELLS RELAXATION HOLE PHOTOLUMINESCENCE SEMICONDUCTORS LOCALIZATION TRANSITIONS EXCITONS CARRIERS GROWTH Wells Relaxation Hole Photoluminescence Semiconductors Localization Transitions Excitons Carriers Growth |
| ISSN号 | 0021-8979 ; 0021-8979 |
| 通讯作者 | ning, jq (reprint author), univ hong kong, dept phys, pokfulam rd, hong kong, hong kong, peoples r china, sjxu@hkucc.hku.hk |
| 英文摘要 | Electronic band structures and spin states of the InAs/GaAs quantum dots (QDs) induced by the wetting-layer fluctuation were investigated by employing the technique of time-resolved Kerr rotation (TRKR) with and without magnetic field. Sign change of the Kerr rotation signal was unambiguously observed when only the wavelength of the pump/probe light was scanned. By carefully examining the dependence of TRKR signal on the excitation wavelength and magnetic field as well as photoluminescence and reflectance spectra, the physical origin causing the sign change of the Kerr signal is uncovered. It is due to the resonant excitations of electrons with opposite spin orientations at heavy-(hh) and light-hole (lh) subbands, respectively, since there is a large enough energy separation in QDs for the excitation laser pulses. This measurement also leads to a precise determination of the energy separation between the hh and lh subbands near k = 0 point in the dots. (C) 2011 American Institute of Physics. [doi:10.1063/1.3633508] |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2012-01-06 ; 2012-01-06 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22679]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 通讯作者 | Ning, JQ (reprint author), Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China, sjxu@hkucc.hku.hk |
| 推荐引用方式 GB/T 7714 | Ning JQ,Xu SJ,Ruan XZ,et al. Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation, Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation[J]. journal of applied physics, JOURNAL OF APPLIED PHYSICS,2011, 2011,110, 110(5):54320, 54320. |
| APA | Ning JQ.,Xu SJ.,Ruan XZ.,Ji Y.,Zheng HZ.,...&Ning, JQ .(2011).Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation.journal of applied physics,110(5),54320. |
| MLA | Ning JQ,et al."Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation".journal of applied physics 110.5(2011):54320. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。