Enhancing the Curie Temperature of Ferromagnetic Semiconductor (Ga,Mn)As to 200 K via Nanostructure Engineering
文献类型：期刊论文
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| 作者 | Chen L; Yang X; Yang FH; Zhao JH; Misuraca J; Xiong P; von Molnar S; Zhao, JH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China, jhzhao@red.semi.ac.cn |
| 刊名 | nano letters
 ; NANO LETTERS
|
| 出版日期 | 2011 ; 2011 |
| 卷号 | 11期号:7页码:2584-2589 |
| 关键词 | MANIPULATION GAAS Manipulation Gaas |
| ISSN号 | 1530-6984 ; 1530-6984 |
| 通讯作者 | zhao, jh (reprint author), chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china, jhzhao@red.semi.ac.cn |
| 英文摘要 | We demonstrate by magneto-transport measurements that a Curie temperature as high as 200 K can be obtained in nanostructures of (Ga,Mn)As. Heavily Mn-doped (Ga,Mn)As films were patterned into nanowires and then subject to low-temperature annealing. Resistance and Hall effect measurements demonstrated a consistent increase of T(C) with decreasing wire width down to about 300 nm. This observation is attributed primarily to the increase of the free surface in the narrower wires, which allows the Mn interstitials to diffuse out at the sidewalls, thus enhancing the efficiency of annealing. These results may provide useful information on optimal structures for (Ga,Mn)As-based nanospintronic devices operational at relatively high temperatures. |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china[60836002, 10920101071]; major state basic research of china[2007cb924903]; chinese academy of sciences[kjcx2.yw.w09-1]; nsf materials world network[dmr-0908625] |
| 语种 | 英语 ; 英语 |
| 资助机构 | National Natural Science Foundation of China[60836002, 10920101071]; Major State Basic Research of China[2007CB924903]; Chinese Academy of Sciences[KJCX2.YW.W09-1]; NSF Materials World Network[DMR-0908625] |
| 公开日期 | 2012-01-06 ; 2012-01-06 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22681]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 通讯作者 | Zhao, JH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China, jhzhao@red.semi.ac.cn |
| 推荐引用方式 GB/T 7714 | Chen L,Yang X,Yang FH,et al. Enhancing the Curie Temperature of Ferromagnetic Semiconductor (Ga,Mn)As to 200 K via Nanostructure Engineering, Enhancing the Curie Temperature of Ferromagnetic Semiconductor (Ga,Mn)As to 200 K via Nanostructure Engineering[J]. nano letters, NANO LETTERS,2011, 2011,11, 11(7):2584-2589, 2584-2589. |
| APA | Chen L.,Yang X.,Yang FH.,Zhao JH.,Misuraca J.,...&Zhao, JH .(2011).Enhancing the Curie Temperature of Ferromagnetic Semiconductor (Ga,Mn)As to 200 K via Nanostructure Engineering.nano letters,11(7),2584-2589. |
| MLA | Chen L,et al."Enhancing the Curie Temperature of Ferromagnetic Semiconductor (Ga,Mn)As to 200 K via Nanostructure Engineering".nano letters 11.7(2011):2584-2589. |
入库方式： OAI收割
来源：半导体研究所
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