Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics
文献类型：期刊论文
| ; | |
| 作者 | Lv YJ; Lin ZJ; Meng LG; Yu YX; Luan CB; Cao ZF; Chen H; Sun BQ; Wang ZG; Lin, ZJ (reprint author), Shandong Univ, Sch Phys, Jinan 250100, Peoples R China, linzj@sdu.edu.cn |
| 刊名 | applied physics letters
 ; APPLIED PHYSICS LETTERS
|
| 出版日期 | 2011 ; 2011 |
| 卷号 | 99期号:12页码:123504 |
| ISSN号 | 0003-6951 ; 0003-6951 |
| 通讯作者 | lin, zj (reprint author), shandong univ, sch phys, jinan 250100, peoples r china, linzj@sdu.edu.cn |
| 英文摘要 | Both circular and rectangular Ni Schottky contacts on AlGaN/AlN/GaN heterostructures have been fabricated. Both of the Schottky barrier heights were measured by internal photoemission. The flat-band voltage (V(0)) for the AlGaN/AlN/GaN heterostructure Schottky contacts was analyzed and obtained from the forward current-voltage (I-V) characteristics. Based on the forward I-V characteristics and with the obtained flat-band voltage, the Schottky barrier heights for the circular and rectangular diodes have been analyzed and calculated by self-consistently solving Schrodinger's and Poisson's equations. The evaluated Schottky barrier heights for the prepared circular and rectangular Ni Schottky diodes agree well with the photocurrent measured results. (C) 2011 American Institute of Physics. [doi:10.1063/1.3643139] |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china[10774090]; national basic research program of china[2007cb936602] |
| 语种 | 英语 ; 英语 |
| 资助机构 | National Natural Science Foundation of China[10774090]; National Basic Research Program of China[2007CB936602] |
| 公开日期 | 2012-01-06 ; 2012-01-06 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22683]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 通讯作者 | Lin, ZJ (reprint author), Shandong Univ, Sch Phys, Jinan 250100, Peoples R China, linzj@sdu.edu.cn |
| 推荐引用方式 GB/T 7714 | Lv YJ,Lin ZJ,Meng LG,et al. Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics, Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics[J]. applied physics letters, APPLIED PHYSICS LETTERS,2011, 2011,99, 99(12):123504, 123504. |
| APA | Lv YJ.,Lin ZJ.,Meng LG.,Yu YX.,Luan CB.,...&Lin, ZJ .(2011).Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics.applied physics letters,99(12),123504. |
| MLA | Lv YJ,et al."Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics".applied physics letters 99.12(2011):123504. |
入库方式： OAI收割
来源：半导体研究所
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