GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy
文献类型：期刊论文
| ; | |
| 作者 | He JF; Wang HL; Shang XJ; Li MF; Zhu Y; Wang LJ; Yu Y; Ni HQ; Xu YQ; Niu ZC |
| 刊名 | journal of physics d-applied physics
 ; JOURNAL OF PHYSICS D-APPLIED PHYSICS
|
| 出版日期 | 2011 ; 2011 |
| 卷号 | 44期号:33页码:335102 |
| ISSN号 | 0022-3727 ; 0022-3727 |
| 关键词 | 1.3 MU-M STRAIN RELIEF LASERS SUBSTRATE PHOTOLUMINESCENCE DISLOCATIONS OPERATION RANGE 1.3 Mu-m Strain Relief Lasers Substrate Photoluminescence Dislocations Operation Range |
| 通讯作者 | he, jf (reprint author), chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china, hejifang@semi.ac.cn |
| 英文摘要 | Molecular beam epitaxy growth of GaAs-based long-wavelength metamorphic InAs/InGaAs quantum dots (QDs) is investigated. With optimized multi-step-graded InGaAs metamorphic buffer layers and growth conditions, room temperature 1.46 mu m emission from InAs/In(0.15)Ga(0.85)As QDs is realized, and broad-area laser diodes are fabricated with a very low etch pit defect density of less than 5.0 x 10(3) cm(-2). The lasers operate under pulsed operation mode at room temperature with a low threshold current density of 146.7A cm(-2). |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 资助信息 | national natural science foundation of china[10734060, 90921015]; national basic research program of china[2007cb936304, 2010cb327601] |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 资助机构 | National Natural Science Foundation of China[10734060, 90921015]; National Basic Research Program of China[2007CB936304, 2010CB327601] |
| 公开日期 | 2012-01-06 ; 2012-01-06 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22685]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 通讯作者 | He, JF (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China, hejifang@semi.ac.cn |
| 推荐引用方式 GB/T 7714 | He JF,Wang HL,Shang XJ,et al. GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy, GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy[J]. journal of physics d-applied physics, JOURNAL OF PHYSICS D-APPLIED PHYSICS,2011, 2011,44, 44(33):335102, 335102. |
| APA | He JF.,Wang HL.,Shang XJ.,Li MF.,Zhu Y.,...&He, JF .(2011).GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy.journal of physics d-applied physics,44(33),335102. |
| MLA | He JF,et al."GaAs-based long-wavelength InAs quantum dots on multi-step-graded InGaAs metamorphic buffer grown by molecular beam epitaxy".journal of physics d-applied physics 44.33(2011):335102. |
入库方式： OAI收割
来源：半导体研究所
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