Improved tunneling magnetoresistance in (Ga,Mn)As/AlO(x)/CoFeB magnetic tunnel junctions
文献类型：期刊论文
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| 作者 | Yu GQ; Chen L; Rizwan S; Zhao JH; Xu K; Han XF; Han, XF (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China, xfhan@aphy.iphy.ac.cn |
| 刊名 | applied physics letters
 ; APPLIED PHYSICS LETTERS
|
| 出版日期 | 2011 ; 2011 |
| 卷号 | 98期号:26页码:262501 |
| 关键词 | TEMPERATURE GA1-XMNXAS TRANSPORT EPILAYERS (GA MN)AS FILMS Temperature (Ga Ga1-xmnxas Mn)As Transport Epilayers Films |
| ISSN号 | 0003-6951 ; 0003-6951 |
| 通讯作者 | han, xf (reprint author), chinese acad sci, inst phys, beijing natl lab condensed matter phys, beijing 100190, peoples r china, xfhan@aphy.iphy.ac.cn |
| 英文摘要 | We fabricated (Ga,Mn)As/AlO(x)/Co(40)Fe(40)B(20) magnetic tunnel junctions with ferromagnetic semiconductor/insulator/ferromagnetic metal (S/I/F) structure. The treatments of pre-annealing and post-plasma cleaning on the (Ga,Mn) As film were introduced before the growth of the subsequent layers. A high tunneling magnetoresistance (TMR) ratio of 101% is achieved at 2 K, and the spin polarization of (Ga,Mn) As, P = 56.8%, is deduced from Julliere's formula. The improved TMR ratio is primarily due to the improved magnetism of (Ga,Mn) As layer by low-temperature annealing and cleaned interface between (Ga,Mn) As and AlO(x) attained by subsequent plasma cleaning process. (C) 2011 American Institute of Physics. [doi:10.1063/1.3603946] |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | fundamental research of ministry of science and technology [most][2010cb934400]; national natural science foundation of china [nsfc][10934099, 10874225, 51021061]; k. c. wong education foundation, hong kong |
| 语种 | 英语 ; 英语 |
| 资助机构 | Fundamental Research of Ministry of Science and Technology [MOST][2010CB934400]; National Natural Science Foundation of China [NSFC][10934099, 10874225, 51021061]; K. C. Wong Education Foundation, Hong Kong |
| 公开日期 | 2012-01-06 ; 2012-01-06 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22687]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 通讯作者 | Han, XF (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China, xfhan@aphy.iphy.ac.cn |
| 推荐引用方式 GB/T 7714 | Yu GQ,Chen L,Rizwan S,et al. Improved tunneling magnetoresistance in (Ga,Mn)As/AlO(x)/CoFeB magnetic tunnel junctions, Improved tunneling magnetoresistance in (Ga,Mn)As/AlO(x)/CoFeB magnetic tunnel junctions[J]. applied physics letters, APPLIED PHYSICS LETTERS,2011, 2011,98, 98(26):262501, 262501. |
| APA | Yu GQ.,Chen L.,Rizwan S.,Zhao JH.,Xu K.,...&Han, XF .(2011).Improved tunneling magnetoresistance in (Ga,Mn)As/AlO(x)/CoFeB magnetic tunnel junctions.applied physics letters,98(26),262501. |
| MLA | Yu GQ,et al."Improved tunneling magnetoresistance in (Ga,Mn)As/AlO(x)/CoFeB magnetic tunnel junctions".applied physics letters 98.26(2011):262501. |
入库方式： OAI收割
来源：半导体研究所
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