Interface effect on the electronic structure and optical properties of InAs/GaSb superlattices
文献类型：期刊论文
| ; | |
| 作者 | Lang, XL; Xia, JB; Lang, XL (reprint author), CAS, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China,langxiaoli@semi.ac.cn; xiajb@semi.ac.cn |
| 刊名 | journal of physics d-applied physics
 ; JOURNAL OF PHYSICS D-APPLIED PHYSICS
|
| 出版日期 | 2011 ; 2011 |
| 卷号 | 44期号:42页码:425103 |
| 关键词 | GASB SUPER-LATTICE SEMICONDUCTOR HETEROSTRUCTURES DEFORMATION POTENTIALS II SUPERLATTICES BAND PARAMETERS DETECTORS APPROXIMATION TRANSITIONS Gasb Super-lattice Semiconductor Heterostructures Deformation Potentials Ii Superlattices Band Parameters Detectors Approximation Transitions |
| ISSN号 | 0022-3727 ; 0022-3727 |
| 通讯作者 | lang, xl (reprint author), cas, state key lab superlattices & microstruct, inst semicond, beijing 100083, peoples r china，langxiaoli@semi.ac.cn ; xiajb@semi.ac.cn |
| 英文摘要 | The electronic structures of InAs/GaSb superlattices (SLs) are calculated in the framework of eight-band effective-mass theory, including the interface (IF) potential. With two adjustable parameters related to the types of two interfaces, the calculated energy gaps agree excellently with the experimental cut-off energy for a series of samples from different research groups, which proves the importance of IF effect, especially for the short-period SLs. Also, the optical properties of InAs/GaSb SLs are investigated. We proved that the intrinsic absorption coefficient of arbitrary polarization direction alpha((epsilon) over cap) can be expressed as a function of alpha((x) over cap) and alpha((z) over cap) for symmetric-interface SL (D(2d) symmetry). The calculated alpha((x) over cap) agrees well with the experimental data. This method can be applied to predict the cut-off energy of InAs/GaSb SLs and design infrared detectors, and can also be applied to other SLs. |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | special funds for the national basic research program[2011cb922200]; national natural science foundation[60521001] |
| 语种 | 英语 ; 英语 |
| 资助机构 | special funds for the National Basic Research Program[2011CB922200]; National Natural Science Foundation[60521001] |
| 公开日期 | 2012-01-06 ; 2012-01-06 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22689]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 通讯作者 | Lang, XL (reprint author), CAS, State Key Lab Superlattices & Microstruct, Inst Semicond, Beijing 100083, Peoples R China,langxiaoli@semi.ac.cn; xiajb@semi.ac.cn |
| 推荐引用方式 GB/T 7714 | Lang, XL,Xia, JB,Lang, XL ,et al. Interface effect on the electronic structure and optical properties of InAs/GaSb superlattices, Interface effect on the electronic structure and optical properties of InAs/GaSb superlattices[J]. journal of physics d-applied physics, JOURNAL OF PHYSICS D-APPLIED PHYSICS,2011, 2011,44, 44(42):425103, 425103. |
| APA | Lang, XL,Xia, JB,Lang, XL ,&xiajb@semi.ac.cn.(2011).Interface effect on the electronic structure and optical properties of InAs/GaSb superlattices.journal of physics d-applied physics,44(42),425103. |
| MLA | Lang, XL,et al."Interface effect on the electronic structure and optical properties of InAs/GaSb superlattices".journal of physics d-applied physics 44.42(2011):425103. |
入库方式： OAI收割
来源：半导体研究所
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