Native p-type transparent conductive CuI via intrinsic defects
文献类型：期刊论文
| ; | |
| 作者 | Wang J; Li JB; Li SS; Li, JB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China, jbli@semi.ac.cn |
| 刊名 | journal of applied physics
 ; JOURNAL OF APPLIED PHYSICS
|
| 出版日期 | 2011 ; 2011 |
| 卷号 | 110期号:5页码:54907 |
| 关键词 | HYBRID ELECTROCHEMICAL/CHEMICAL SYNTHESIS AUGMENTED-WAVE METHOD COPPER HALIDES BAND-STRUCTURE II-VI SEMICONDUCTORS EMISSION DIAMOND CUBR CUCL Hybrid Electrochemical/chemical Synthesis Augmented-wave Method Copper Halides Band-structure Ii-vi Semiconductors Emission Diamond Cubr Cucl |
| ISSN号 | 0021-8979 ; 0021-8979 |
| 通讯作者 | li, jb (reprint author), chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china, jbli@semi.ac.cn |
| 英文摘要 | The ability of CuI to be doped p-type via the introduction of native defects has been investigated using first-principles pseudopotential calculations based on density functional theory. The Cu vacancy has a lower formation energy than any of the other native defects, which include I vacancy (V(I)), Cu interstitial (Cu(i)), I interstitial (I(i)), Cu antisite (Cu(I)), and I antisite (I(Cu)). Combined with its shallow acceptor level, it offers sufficient hole concentrations in CuI. The natural band alignments as compared to zinc-blende ZnS, ZnSe, and ZnTe have also been calculated in order to further identify the p-type dopability of CuI. It is found that CuI has a relatively high valence band maximum and conduction band minimum, which also makes it easy to dope CuI p-type in terms of the doping limit rule. In addition, the small effective mass of the light hole-about 0.303m(0)-can provide high mobility and p-type conductivity in CuI. All of these results make CuI an ideal candidate for native p-type materials (C) 2011 American Institute of Physics. [doi:10.1063/1.3633220] |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2012-01-06 ; 2012-01-06 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22699]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 通讯作者 | Li, JB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China, jbli@semi.ac.cn |
| 推荐引用方式 GB/T 7714 | Wang J,Li JB,Li SS,et al. Native p-type transparent conductive CuI via intrinsic defects, Native p-type transparent conductive CuI via intrinsic defects[J]. journal of applied physics, JOURNAL OF APPLIED PHYSICS,2011, 2011,110, 110(5):54907, 54907. |
| APA | Wang J,Li JB,Li SS,&Li, JB .(2011).Native p-type transparent conductive CuI via intrinsic defects.journal of applied physics,110(5),54907. |
| MLA | Wang J,et al."Native p-type transparent conductive CuI via intrinsic defects".journal of applied physics 110.5(2011):54907. |
入库方式： OAI收割
来源：半导体研究所
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