Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells
文献类型：期刊论文
| ; | |
| 作者 | Shang XJ; He JF; Li MF; Zhan F; Ni HQ; Niu ZC; Pettersson H; Fu Y; Fu, Y (reprint author), Royal Inst Technol, Sch Biotechnol, Div Theoret Chem & Biol, S-10691 Stockholm, Swedenfyg@theochem.kth.se |
| 刊名 | applied physics letters
 ; APPLIED PHYSICS LETTERS
|
| 出版日期 | 2011 ; 2011 |
| 卷号 | 99期号:11页码:113514 |
| 关键词 | WELL INFRARED PHOTODETECTOR PHOTOCURRENT EFFICIENCY Well Infrared Photodetector Photocurrent Efficiency |
| ISSN号 | 0003-6951 ; 0003-6951 |
| 通讯作者 | fu, y (reprint author), royal inst technol, sch biotechnol, div theoret chem & biol, s-10691 stockholm, swedenfyg@theochem.kth.se |
| 英文摘要 | Photocurrents (PCs) of three p-i-n GaAs solar cells, sample A with InAs quantum dots (QDs) embedded in the depletion region, B with QDs in the n region, and C without QDs, were studied experimentally and theoretically. Above GaAs bandgap, the PC of A is increased, while B is decreased with respect to C, since in A, the QD-induced reflection of hole wave function increases its overlap with electron wave function so that the optical transition rate is enhanced, while carrier mobility in B is reduced due to QD-induced potential variations. Moreover, A and B have increased PCs in the sub-GaAs-bandgap range due to QD optical absorptions. (C) 2011 American Institute of Physics. [doi:10.1063/1.3638488] |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | chinese natural science fund[60625405, 90921015]; 973 project in china[2010cb327601]; richertska foundation in sweden |
| 语种 | 英语 ; 英语 |
| 资助机构 | Chinese Natural Science Fund[60625405, 90921015]; 973 project in China[2010CB327601]; Richertska Foundation in Sweden |
| 公开日期 | 2012-01-06 ; 2012-01-06 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22703]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 通讯作者 | Fu, Y (reprint author), Royal Inst Technol, Sch Biotechnol, Div Theoret Chem & Biol, S-10691 Stockholm, Swedenfyg@theochem.kth.se |
| 推荐引用方式 GB/T 7714 | Shang XJ,He JF,Li MF,et al. Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells, Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells[J]. applied physics letters, APPLIED PHYSICS LETTERS,2011, 2011,99, 99(11):113514, 113514. |
| APA | Shang XJ.,He JF.,Li MF.,Zhan F.,Ni HQ.,...&Fu, Y .(2011).Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells.applied physics letters,99(11),113514. |
| MLA | Shang XJ,et al."Quantum-dot-induced optical transition enhancement in InAs quantum-dot-embedded p-i-n GaAs solar cells".applied physics letters 99.11(2011):113514. |
入库方式： OAI收割
来源：半导体研究所
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