Raman study of ultrathin Fe(3)O(4) films on GaAs(001) substrate: stoichiometry, epitaxial orientation and strain
文献类型：期刊论文
| ; | |
| 作者 | Zhang, J; Tan, PH; Zhao, WJ; Lu, J; Zhao, JH; Tan, PH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China,phtan@semi.ac.cn |
| 刊名 | journal of raman spectroscopy
 ; JOURNAL OF RAMAN SPECTROSCOPY
|
| 出版日期 | 2011 ; 2011 |
| 卷号 | 42期号:6页码:1388-1391 |
| 关键词 | Raman spectroscopy ultrathin Fe(3)O(4) film crystal orientation strain phonon strain-shift coefficient PULSED-LASER DEPOSITION THIN-FILMS SPIN-TRANSPORT MAGNETITE SEMICONDUCTORS SPINTRONICS SCATTERING CORROSION DEVICES GROWTH Raman Spectroscopy Ultrathin Fe(3)o(4) Film Crystal Orientation Strain Phonon Strain-shift Coefficient Pulsed-laser Deposition Thin-films Spin-transport Magnetite Semiconductors Spintronics Scattering Corrosion Devices Growth |
| ISSN号 | 0377-0486 ; 0377-0486 |
| 通讯作者 | tan, ph (reprint author), chinese acad sci, inst semicond, state key lab superlattices & microstruct, beijing 100083, peoples r china，phtan@semi.ac.cn |
| 英文摘要 | The growth and characterization of high-quality ultrathin Fe(3)O(4) films on semiconductor substrates is a key step for spintronic devices. A stable, single-crystalline ultrathin Fe(3)O(4) film on GaAs(001) substrate is obtained by post-growth annealing of epitaxial Fe film with thicknesses of 5 and 12 nm in air. Raman spectroscopy shows a high ability to convincingly characterize the stoichiometry, epitaxial orientation and strain of such ultrathin Fe(3)O(4) films. Polarized Raman spectroscopy confirms the unit cell of Fe(3)O(4) films is rotated by 45 degrees to match that of the Fe (001) layer on GaAs, which results in a built-in strain of -3.5% in Fe(3)O(4) films. The phonon strain-shift coefficient(-126 cm(-1)) of the A(1g) mode is proposed to probe strain effect and strain relaxation of thin Fe(3)O(4) films on substrates. It can be used to identify whether the Fe layer is fully oxidized to Fe(3)O(4) or not. Copyright (C) 2011 John Wiley & Sons, Ltd. |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china[10874177, 10934007]; special funds for the major state basic research of china[2007cb924903, 2009cb929300] |
| 语种 | 英语 ; 英语 |
| 资助机构 | National Natural Science Foundation of China[10874177, 10934007]; special funds for the Major State Basic Research of China[2007CB924903, 2009CB929300] |
| 公开日期 | 2012-01-06 ; 2012-01-06 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22705]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 通讯作者 | Tan, PH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China,phtan@semi.ac.cn |
| 推荐引用方式 GB/T 7714 | Zhang, J,Tan, PH,Zhao, WJ,et al. Raman study of ultrathin Fe(3)O(4) films on GaAs(001) substrate: stoichiometry, epitaxial orientation and strain, Raman study of ultrathin Fe(3)O(4) films on GaAs(001) substrate: stoichiometry, epitaxial orientation and strain[J]. journal of raman spectroscopy, JOURNAL OF RAMAN SPECTROSCOPY,2011, 2011,42, 42(6):1388-1391, 1388-1391. |
| APA | Zhang, J,Tan, PH,Zhao, WJ,Lu, J,Zhao, JH,&Tan, PH .(2011).Raman study of ultrathin Fe(3)O(4) films on GaAs(001) substrate: stoichiometry, epitaxial orientation and strain.journal of raman spectroscopy,42(6),1388-1391. |
| MLA | Zhang, J,et al."Raman study of ultrathin Fe(3)O(4) films on GaAs(001) substrate: stoichiometry, epitaxial orientation and strain".journal of raman spectroscopy 42.6(2011):1388-1391. |
入库方式： OAI收割
来源：半导体研究所
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