Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Gamma critical point
文献类型：期刊论文
| ; | |
| 作者 | Wang, LG; Shen, C; Zheng, HZ; Zhu, H; Zhao, JH; Zheng, HZ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China,hzzheng@red.semi.ac.cn |
| 刊名 | chinese physics b
 ; CHINESE PHYSICS B
|
| 出版日期 | 2011 ; 2011 |
| 卷号 | 20期号:10页码:100301 |
| 关键词 | charged acceptor centre screening effect exchange interaction SHALLOW ACCEPTOR STATES GALLIUM-ARSENIDE SEMICONDUCTORS FIELD Charged Acceptor Centre Screening Effect Exchange Interaction Shallow Acceptor States Gallium-arsenide Semiconductors Field |
| ISSN号 | 1674-1056 ; 1674-1056 |
| 通讯作者 | zheng, hz (reprint author), chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china，hzzheng@red.semi.ac.cn |
| 英文摘要 | This paper describes an n-i-p-i-n model heterostructure with a manganese (Mn)-doped p-type base region to check the stability of a positively charged manganese A(Mn)(+) centre with two holes weakly bound by a negatively charged 3d(5)(Mn) core of a local spin S = 5/2 in the framework of the effective mass approximation near the Gamma critical point (k similar to 0). By including the carrier screening effect, the ground state energy and the binding energy of the second hole in the positively charged centre A(Mn)(+) are calculated within a hole concentration range from 1 x 10(16) cm(-3) to 1 x 10(17) cm(-3), which is achievable by biasing the structure under photo-excitation. For comparison, the ground-state energy of a single hole in the neutral A(Mn)(0) centre is calculated in the same concentration range. It turns out that the binding energy of the second hole in the A(Mn)(+) centre varies from 9.27 meV to 4.57 meV. We propose that the presence of the A(Mn)(+) centre can be examined by measuring the photoluminescence from recombination of electrons in the conduction band with the bound holes in the A(Mn)(+) centre since a high frequency dielectric constant of epsilon(infinity) = 10.66 can be safely adopted in this case. The novel feature of the ability to tune the impurity level of the A(Mn)(+) centre makes it attractive for optically and electrically manipulating local magnetic spins in semiconductors. |
| 学科主题 | 半导体物理 ; 半导体物理 |
| 收录类别 | SCI |
| 资助信息 | national basic research program of china[2007cb924904, 2011cb932901] |
| 语种 | 英语 ; 英语 |
| 资助机构 | National Basic Research Program of China[2007CB924904, 2011CB932901] |
| 公开日期 | 2012-01-06 ; 2012-01-06 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22709]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 通讯作者 | Zheng, HZ (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China,hzzheng@red.semi.ac.cn |
| 推荐引用方式 GB/T 7714 | Wang, LG,Shen, C,Zheng, HZ,et al. Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Gamma critical point, Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Gamma critical point[J]. chinese physics b, CHINESE PHYSICS B,2011, 2011,20, 20(10):100301, 100301. |
| APA | Wang, LG,Shen, C,Zheng, HZ,Zhu, H,Zhao, JH,&Zheng, HZ .(2011).Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Gamma critical point.chinese physics b,20(10),100301. |
| MLA | Wang, LG,et al."Stability of the positively charged manganese centre in GaAs heterostructures examined theoretically by the effective mass approximation calculation near the Gamma critical point".chinese physics b 20.10(2011):100301. |
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来源：半导体研究所
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