Comprehensive thermal characterization using ruby R fluorescence lines of sapphire and GaNE(2)-high Raman mode from Raman spectra in high-power flip-chip InGaN/GaN LEDs
文献类型：期刊论文
| 作者 | Cui M ; Zhou TF ; Wang MR ; Huang J ; Huang HJ ; Zhang JP ; Xu K ; Yang H |
| 刊名 | journal of physics d-applied physics
 |
| 出版日期 | 2011 |
| 卷号 | 44期号:35页码:355101 |
| 关键词 | LIGHT-EMITTING-DIODES TEMPERATURE-MEASUREMENTS GAN SCATTERING DEPENDENCE JUNCTION PHONONS ALN |
| ISSN号 | 0022-3727 |
| 通讯作者 | cui, m (reprint author), chinese acad sci, suzhou inst nanotech & nanobion, suzhou 215123, peoples r china, tfzhou2007@sinano.ac.cn ; kxu2006@sinano.ac.cn |
| 学科主题 | 半导体器件 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china[50902099]; suzhou science and technology project[zxg0804]; cas[yz200939] |
| 语种 | 英语 |
| 公开日期 | 2012-02-06 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22771]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Cui M,Zhou TF,Wang MR,et al. Comprehensive thermal characterization using ruby R fluorescence lines of sapphire and GaNE(2)-high Raman mode from Raman spectra in high-power flip-chip InGaN/GaN LEDs[J]. journal of physics d-applied physics,2011,44(35):355101. |
| APA | Cui M.,Zhou TF.,Wang MR.,Huang J.,Huang HJ.,...&Yang H.(2011).Comprehensive thermal characterization using ruby R fluorescence lines of sapphire and GaNE(2)-high Raman mode from Raman spectra in high-power flip-chip InGaN/GaN LEDs.journal of physics d-applied physics,44(35),355101. |
| MLA | Cui M,et al."Comprehensive thermal characterization using ruby R fluorescence lines of sapphire and GaNE(2)-high Raman mode from Raman spectra in high-power flip-chip InGaN/GaN LEDs".journal of physics d-applied physics 44.35(2011):355101. |
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来源：半导体研究所
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