Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates
文献类型：期刊论文
| 作者 | Li, TF ; Chen, YH ; Lei, W ; Zhou, XL ; Luo, S ; Hu, YZ ; Wang, LJ ; Yang, T ; Wang, ZG |
| 刊名 | nanoscale research letters
 |
| 出版日期 | 2011 |
| 卷号 | 6页码:463 |
| ISSN号 | 1931-7573 |
| 关键词 | RAMAN-SCATTERING SEMICONDUCTING NANOWIRES OPTOELECTRONIC DEVICES PHOSPHIDE NANOWIRES OPTICAL PHONONS SILICON CRYSTALS SPECTRA |
| 通讯作者 | chen, yh (reprint author), chinese acad sci, key lab semicond mat sci, inst semicond, beijing 100083, peoples r china， |
| 学科主题 | 半导体材料 |
| 资助信息 | national natural science foundation of china[60625402, 60990313]; 973 program |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-02-06 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22773]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Li, TF,Chen, YH,Lei, W,et al. Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates[J]. nanoscale research letters,2011,6:463. |
| APA | Li, TF.,Chen, YH.,Lei, W.,Zhou, XL.,Luo, S.,...&Wang, ZG.(2011).Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates.nanoscale research letters,6,463. |
| MLA | Li, TF,et al."Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates".nanoscale research letters 6(2011):463. |
入库方式： OAI收割
来源：半导体研究所
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