Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Jin, L ; Zhou, HY ; Qu, SC ; Wang, ZG |
| 刊名 | materials science in semiconductor processing
 |
| 出版日期 | 2011 |
| 卷号 | 14期号:2页码:108-113 |
| 关键词 | Patterned substrate Ion implantation Ordered nanodots Anodic aluminum oxide QUANTUM DOTS ISLANDS GROWTH SEMICONDUCTORS NANOSTRUCTURES COMPUTATION INGAAS |
| ISSN号 | 1369-8001 |
| 通讯作者 | jin, l (reprint author), chinese acad sci, inst semicond, key lab semicond mat sci, pob 912,a 35,tsinghua e rd, beijing 100083, peoples r china，jinlan06@semi.ac.cn ; qsc@semi.ac.cn |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 资助信息 | national basic research program of china (973 program)[2010cb933800]; national natural science foundation of china[60736034, 50990064] |
| 语种 | 英语 |
| 公开日期 | 2012-02-06 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22791]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Jin, L,Zhou, HY,Qu, SC,et al. Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy[J]. materials science in semiconductor processing,2011,14(2):108-113. |
| APA | Jin, L,Zhou, HY,Qu, SC,&Wang, ZG.(2011).Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy.materials science in semiconductor processing,14(2),108-113. |
| MLA | Jin, L,et al."Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy".materials science in semiconductor processing 14.2(2011):108-113. |
入库方式： OAI收割
来源：半导体研究所
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