Electrical and magnetic properties of Ga(1-x)Gd(x)N grown by metal organic chemical vapor deposition
文献类型：期刊论文
| ; | |
| 作者 | Gupta, S; Zaidi, T; Melton, A; Malguth, E; Yu, HB; Liu, ZQ; Liu, XT; Schwartz, J; Ferguson, IT; Ferguson, IT (reprint author), Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA,ianf@uncc.edu |
| 刊名 | journal of applied physics
 ; JOURNAL OF APPLIED PHYSICS
|
| 出版日期 | 2011 ; 2011 |
| 卷号 | 110期号:8页码:83920 |
| 关键词 | FERROMAGNETIC PROPERTIES SEMICONDUCTORS GAN GAGDN Ferromagnetic Properties Semiconductors Gan Gagdn |
| ISSN号 | 0021-8979 ; 0021-8979 |
| 通讯作者 | ferguson, it (reprint author), georgia inst technol, sch elect & comp engn, atlanta, ga 30332 usa，ianf@uncc.edu |
| 英文摘要 | This paper presents the first report on Gd doping (0%-4%) of GaN thin films by metal organic chemical vapor deposition. The Ga(1-x)Gd(x)N films grown in this study were found to be of good crystalline quality, single-phase, and unstrained, with a high saturation magnetization strength of 20 emu/cm(3) being obtained for GaN films doped with 2% Gd at room temperature. Furthermore, these films were found to be conductive with an enhanced n-type behavior suggesting that unintentional donors are responsible for stabilizing the ferromagnetic phase in as-grown Ga(1-x)Gd(x)N. Additionally, it was found that this magnetization can be enhanced by n-(Si: 10(18) cm(-3)) and p-(Mg: 10(19) cm(-3)) doping to 110 emu/cm(3) and similar to 500 emu/cm(3), respectively. This paper shows empirically that holes are more efficient in stabilizing the ferromagnetic phase as compared to electrons. Overall, this research has resulted in a room temperature ferromagnetic dilute magnetic semiconductor that is conductive and whose magnetic properties can be tuned by carrier doping thus providing a path towards realizing spintronic devices. (C) 2011 American Institute of Physics. [doi:10.1063/1.3656019] |
| 学科主题 | 半导体器件 ; 半导体器件 |
| 收录类别 | SCI |
| 资助信息 | air force office of scientific research (afosr) |
| 语种 | 英语 ; 英语 |
| 资助机构 | Air Force Office of Scientific Research (AFOSR) |
| 公开日期 | 2012-02-06 ; 2012-02-06 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22813]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 通讯作者 | Ferguson, IT (reprint author), Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA,ianf@uncc.edu |
| 推荐引用方式 GB/T 7714 | Gupta, S,Zaidi, T,Melton, A,et al. Electrical and magnetic properties of Ga(1-x)Gd(x)N grown by metal organic chemical vapor deposition, Electrical and magnetic properties of Ga(1-x)Gd(x)N grown by metal organic chemical vapor deposition[J]. journal of applied physics, JOURNAL OF APPLIED PHYSICS,2011, 2011,110, 110(8):83920, 83920. |
| APA | Gupta, S.,Zaidi, T.,Melton, A.,Malguth, E.,Yu, HB.,...&Ferguson, IT .(2011).Electrical and magnetic properties of Ga(1-x)Gd(x)N grown by metal organic chemical vapor deposition.journal of applied physics,110(8),83920. |
| MLA | Gupta, S,et al."Electrical and magnetic properties of Ga(1-x)Gd(x)N grown by metal organic chemical vapor deposition".journal of applied physics 110.8(2011):83920. |
入库方式： OAI收割
来源：半导体研究所
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