Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition
文献类型：期刊论文
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| 作者 | Zhang, L; Wei, XC; Liu, NX; Lu, HX; Zeng, JP; Wang, JX; Zeng, YP; Li, JM; Zhang, L (reprint author), Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting, POB 912, Beijing 100083, Peoples R China,zhanglian07@semi.ac.cn |
| 刊名 | applied physics letters
 ; APPLIED PHYSICS LETTERS
|
| 出版日期 | 2011 ; 2011 |
| 卷号 | 98期号:24页码:241111 |
| 关键词 | ALGAN/GAN HETEROSTRUCTURES TRANSPORT-PROPERTIES Algan/gan Heterostructures Transport-properties |
| ISSN号 | 0003-6951 ; 0003-6951 |
| 通讯作者 | zhang, l (reprint author), chinese acad sci, inst semicond, res & dev ctr semicond lighting, pob 912, beijing 100083, peoples r china，zhanglian07@semi.ac.cn |
| 英文摘要 | Our simulated results [Appl. Phys. Lett. 98, 101110 (2011)] reveal that polarization-doped light-emitting diodes (LEDs) have improved internal quantum efficiency due to the enhanced hole injection caused by the improved hole concentration and smooth valence band. In this letter, in order to verify these calculated results, polarization-doped LEDs grown by metalorganic chemical vapor deposition are investigated. The results show that the polarization-doped LED has the improved electroluminescence intensity and external quantum efficiency (EQE) compared with the conventional LED. The influence of the degree of AlGaN gradation on polarization-doped LEDs is also studied. It is found that the polarization-doped LED has the highest EQE when the Al composition of the graded AlGaN is linearly decreased from 0.2 to 0. (C) 2011 American Institute of Physics. [doi:10.1063/1.3601469] |
| 学科主题 | 半导体材料 ; 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 ; 英语 |
| 公开日期 | 2012-02-06 ; 2012-02-06 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22815]  |
| 专题 | 半导体研究所_中科院半导体照明研发中心 |
| 通讯作者 | Zhang, L (reprint author), Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting, POB 912, Beijing 100083, Peoples R China,zhanglian07@semi.ac.cn |
| 推荐引用方式 GB/T 7714 | Zhang, L,Wei, XC,Liu, NX,et al. Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition, Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition[J]. applied physics letters, APPLIED PHYSICS LETTERS,2011, 2011,98, 98(24):241111, 241111. |
| APA | Zhang, L.,Wei, XC.,Liu, NX.,Lu, HX.,Zeng, JP.,...&Zhang, L .(2011).Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition.applied physics letters,98(24),241111. |
| MLA | Zhang, L,et al."Improvement of efficiency of GaN-based polarization-doped light-emitting diodes grown by metalorganic chemical vapor deposition".applied physics letters 98.24(2011):241111. |
入库方式： OAI收割
来源：半导体研究所
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