High electro-to-optical efficiency 180 W Q-switched 532 nm laser with a pulsewidth of 70 ns
文献类型：期刊论文
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| 作者 | Zhang, S; Guo, L; Xiong, B; Liu, Y; Hou, W; Lin, X; Li, J; Zhang, S (reprint author), Chinese Acad Sci, Inst Semicond, Lab All Solid State Light Sources, POB 912, Beijing 100083, Peoples R China,shbzhang@semi.ac.cn |
| 刊名 | applied physics b-lasers and optics
 ; APPLIED PHYSICS B-LASERS AND OPTICS
|
| 出版日期 | 2011 ; 2011 |
| 卷号 | 104期号:4页码:861-866 |
| 关键词 | ND-YAG LASER SOLID-STATE LASER GREEN LASER HIGH-POWER BEAM GENERATION REPETITION RATE AMPLIFIER Nd-yag Laser Solid-state Laser Green Laser High-power Beam Generation Repetition Rate Amplifier |
| ISSN号 | 0946-2171 ; 0946-2171 |
| 通讯作者 | zhang, s (reprint author), chinese acad sci, inst semicond, lab all solid state light sources, pob 912, beijing 100083, peoples r china，shbzhang@semi.ac.cn |
| 英文摘要 | A compact straight cavity with two side-pumped Nd:YAG laser heads and a 90 degrees quartz rotator in between is presented. By intracavity-frequency-doubling with a type II LBO crystal in this cavity, an output power of 180.2 W at 532 nm with a repetition rate of 10 kHz was achieved, corresponding to an electrical-to-optical efficiency of 10.9%. To best of our knowledge, this is the highest electrical-to-optical efficiency of the high power green lasers with above 100 W output power, ever reported. The pulsewidth was 70 ns and the peak power was 257.4 kW. The beam parameter product (beam waist multiplied by half beam divergence angle) was estimated to be 4.2 mm mrad and the power fluctuation over 2.5 hours was calculated to be better than +/- 1.2%. |
| 学科主题 | 半导体器件 ; 半导体器件 |
| 收录类别 | SCI |
| 资助信息 | national high technology research and development program of china[2008aa030116]; national key basic research program of china[2010cb933800]; chinese academy of sciences[yz200801] |
| 语种 | 英语 ; 英语 |
| 资助机构 | National High Technology Research and Development Program of China[2008AA030116]; National Key Basic Research Program of China[2010CB933800]; Chinese Academy of Sciences[YZ200801] |
| 公开日期 | 2012-02-06 ; 2012-02-06 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22765]  |
| 专题 | 半导体研究所_全固态光源实验室 |
| 通讯作者 | Zhang, S (reprint author), Chinese Acad Sci, Inst Semicond, Lab All Solid State Light Sources, POB 912, Beijing 100083, Peoples R China,shbzhang@semi.ac.cn |
| 推荐引用方式 GB/T 7714 | Zhang, S,Guo, L,Xiong, B,et al. High electro-to-optical efficiency 180 W Q-switched 532 nm laser with a pulsewidth of 70 ns, High electro-to-optical efficiency 180 W Q-switched 532 nm laser with a pulsewidth of 70 ns[J]. applied physics b-lasers and optics, APPLIED PHYSICS B-LASERS AND OPTICS,2011, 2011,104, 104(4):861-866, 861-866. |
| APA | Zhang, S.,Guo, L.,Xiong, B.,Liu, Y.,Hou, W.,...&Zhang, S .(2011).High electro-to-optical efficiency 180 W Q-switched 532 nm laser with a pulsewidth of 70 ns.applied physics b-lasers and optics,104(4),861-866. |
| MLA | Zhang, S,et al."High electro-to-optical efficiency 180 W Q-switched 532 nm laser with a pulsewidth of 70 ns".applied physics b-lasers and optics 104.4(2011):861-866. |
入库方式： OAI收割
来源：半导体研究所
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