Forward bias voltage controlled infrared photodetection and electroluminescence from a p-i-n quantum dot structure
文献类型：期刊论文
| 作者 | Cui K ; Ma WQ ; Zhang YH ; Huang JL ; Wei Y ; Cao YL ; Jin Z ; Bian LF |
| 刊名 | applied physics letters
 |
| 出版日期 | 2011 |
| 卷号 | 99期号:2页码:23502 |
| 关键词 | DETECTOR |
| ISSN号 | 0003-6951 |
| 通讯作者 | ma, wq (reprint author), chinese acad sci, lab nanooptoelect, inst semicond, qinghua e rd a 35,pob 912, beijing 100083, peoples r china, wqma@semi.ac.cn |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | china's national 973 research programme[2010cb327602]; natural science fund for innovative research group[61021003]; nsf[60806048] |
| 语种 | 英语 |
| 公开日期 | 2012-02-06 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22747]  |
| 专题 | 半导体研究所_纳米光电子实验室 |
| 推荐引用方式 GB/T 7714 | Cui K,Ma WQ,Zhang YH,et al. Forward bias voltage controlled infrared photodetection and electroluminescence from a p-i-n quantum dot structure[J]. applied physics letters,2011,99(2):23502. |
| APA | Cui K.,Ma WQ.,Zhang YH.,Huang JL.,Wei Y.,...&Bian LF.(2011).Forward bias voltage controlled infrared photodetection and electroluminescence from a p-i-n quantum dot structure.applied physics letters,99(2),23502. |
| MLA | Cui K,et al."Forward bias voltage controlled infrared photodetection and electroluminescence from a p-i-n quantum dot structure".applied physics letters 99.2(2011):23502. |
入库方式： OAI收割
来源：半导体研究所
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