Growth and device characteristics of nano-folding InGaN/GaN multiple quantum well LED
文献类型：期刊论文
| 作者 | Chen GF ; Tan XD ; Wan WT ; Shen J ; Hao QY ; Tang CC ; Zhu JJ ; Liu ZS ; Zhao DG ; Zhang SM |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2011 |
| 卷号 | 60期号:7页码:76104 |
| 关键词 | ARRAYS |
| ISSN号 | 1000-3290 |
| 通讯作者 | zhu, jj (reprint author), chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china, admat@hebut.edu.cn |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | nature science foundation of tianjin[10jcybjc03000]; state key laboratory of integrated optoelectronics, institute of semiconductors, chinese academy of sciences |
| 语种 | unspecified |
| 公开日期 | 2012-02-06 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22839]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Chen GF,Tan XD,Wan WT,et al. Growth and device characteristics of nano-folding InGaN/GaN multiple quantum well LED[J]. acta physica sinica,2011,60(7):76104. |
| APA | Chen GF.,Tan XD.,Wan WT.,Shen J.,Hao QY.,...&Zhang SM.(2011).Growth and device characteristics of nano-folding InGaN/GaN multiple quantum well LED.acta physica sinica,60(7),76104. |
| MLA | Chen GF,et al."Growth and device characteristics of nano-folding InGaN/GaN multiple quantum well LED".acta physica sinica 60.7(2011):76104. |
入库方式： OAI收割
来源：半导体研究所
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