Infrared response of the lateral PIN structure of a highly titanium-doped silicon-on-insulator material
文献类型：期刊论文
| 作者 | Ma, ZH ; Cao, Q ; Zuo, YH ; Zheng, J ; Xue, CL ; Cheng, BW ; Wang, QM |
| 刊名 | chinese physics b
 |
| 出版日期 | 2011 |
| 卷号 | 20期号:10页码:106104 |
| 关键词 | infrared response ion implantation rapid thermal annealing intermediate band solar cell PHOTODIODE |
| ISSN号 | 1674-1056 |
| 通讯作者 | zuo, yh (reprint author), chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china，yhzuo@semi.ac.cn |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 资助信息 | national natural science foundation of china[61036001, 51072194, 60906035] |
| 语种 | 英语 |
| 公开日期 | 2012-02-06 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22843]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Ma, ZH,Cao, Q,Zuo, YH,et al. Infrared response of the lateral PIN structure of a highly titanium-doped silicon-on-insulator material[J]. chinese physics b,2011,20(10):106104. |
| APA | Ma, ZH.,Cao, Q.,Zuo, YH.,Zheng, J.,Xue, CL.,...&Wang, QM.(2011).Infrared response of the lateral PIN structure of a highly titanium-doped silicon-on-insulator material.chinese physics b,20(10),106104. |
| MLA | Ma, ZH,et al."Infrared response of the lateral PIN structure of a highly titanium-doped silicon-on-insulator material".chinese physics b 20.10(2011):106104. |
入库方式： OAI收割
来源：半导体研究所
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