中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Localized surface optical phonon mode in the InGaN/GaN multiple-quantum-wells nanopillars: Raman spectrum and imaging

文献类型:期刊论文

作者Zhu JH ; Ning JQ ; Zheng CC ; Xu SJ ; Zhang SM ; Yang H
刊名applied physics letters
出版日期2011
卷号99期号:11页码:113115
关键词LIGHT-EMITTING-DIODES LASER-DIODES GAN NANOWIRES
ISSN号0003-6951
通讯作者zhu, jh (reprint author), chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china, sjxu@hkucc.hku.hk ; hyang2006@sinano.ac.cn
学科主题光电子学
收录类别SCI
资助信息nsfc[61028012]; national basic research program of china[2007cb936701]
语种英语
公开日期2012-02-06
源URL[http://ir.semi.ac.cn/handle/172111/22845]  
专题半导体研究所_集成光电子学国家重点实验室
推荐引用方式
GB/T 7714
Zhu JH,Ning JQ,Zheng CC,et al. Localized surface optical phonon mode in the InGaN/GaN multiple-quantum-wells nanopillars: Raman spectrum and imaging[J]. applied physics letters,2011,99(11):113115.
APA Zhu JH,Ning JQ,Zheng CC,Xu SJ,Zhang SM,&Yang H.(2011).Localized surface optical phonon mode in the InGaN/GaN multiple-quantum-wells nanopillars: Raman spectrum and imaging.applied physics letters,99(11),113115.
MLA Zhu JH,et al."Localized surface optical phonon mode in the InGaN/GaN multiple-quantum-wells nanopillars: Raman spectrum and imaging".applied physics letters 99.11(2011):113115.

入库方式: OAI收割

来源:半导体研究所

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