Strained and strain-relaxed epitaxial Ge(1-x)Sn(x) alloys on Si(100) substrates
文献类型：期刊论文
| 作者 | Wang, W ; Su, SJ ; Zheng, J ; Zhang, GZ ; Zuo, YH ; Cheng, BW ; Wang, QM |
| 刊名 | chinese physics b
 |
| 出版日期 | 2011 |
| 卷号 | 20期号:6页码:68103 |
| ISSN号 | 1009-1963 |
| 关键词 | GeSn alloys strained strain-relaxed molecular beam epitaxy |
| 通讯作者 | cheng, bw (reprint author), chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china，cbw@semi.ac.cn |
| 学科主题 | 光电子学 |
| 资助信息 | national high technology research and development program of china[2006aa03z415]; national basic research program of china[2007cb613404]; national natural science foundation of china[60906035, 61036003]; chinese academy of sciences[iscas2009t01] |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-02-06 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22867]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Wang, W,Su, SJ,Zheng, J,et al. Strained and strain-relaxed epitaxial Ge(1-x)Sn(x) alloys on Si(100) substrates[J]. chinese physics b,2011,20(6):68103. |
| APA | Wang, W.,Su, SJ.,Zheng, J.,Zhang, GZ.,Zuo, YH.,...&Wang, QM.(2011).Strained and strain-relaxed epitaxial Ge(1-x)Sn(x) alloys on Si(100) substrates.chinese physics b,20(6),68103. |
| MLA | Wang, W,et al."Strained and strain-relaxed epitaxial Ge(1-x)Sn(x) alloys on Si(100) substrates".chinese physics b 20.6(2011):68103. |
入库方式： OAI收割
来源：半导体研究所
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