Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition
文献类型：期刊论文
| 作者 | Hu WX (Hu Wei-Xuan) ; Cheng BW (Cheng Bu-Wen) ; Xue CL (Xue Chun-Lai) ; Su SJ (Su Shao-Jian) ; Wang QM (Wang Qi-Ming) |
| 刊名 | chinese physics b
 |
| 出版日期 | 2011 |
| 卷号 | 20期号:12页码:126801 |
| 学科主题 | 光电子学 |
| 公开日期 | 2012-02-22 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22930]  |
| 专题 | 半导体研究所_集成光电子学国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Hu WX ,Cheng BW ,Xue CL ,et al. Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition[J]. chinese physics b,2011,20(12):126801. |
| APA | Hu WX ,Cheng BW ,Xue CL ,Su SJ ,&Wang QM .(2011).Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition.chinese physics b,20(12),126801. |
| MLA | Hu WX ,et al."Formation of rippled surface morphology during Si/Si (100) epitaxy by ultrahigh vacuum chemical vapour deposition".chinese physics b 20.12(2011):126801. |
入库方式： OAI收割
来源：半导体研究所
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