Conduction and Valence Band Discontinuities in Some New Semiconductor Heterojunctions
文献类型：期刊论文
| 作者 | Zhu QS (Zhu Qinsheng) ; Wu J (Wu Ju) ; Li CM (Li Chengming) ; Wang ZG (Wang Zhanguo) |
| 刊名 | journal of nanoscience and nanotechnology
 |
| 出版日期 | 2011 |
| 卷号 | 11期号:11 s1页码:9368-9383 |
| 学科主题 | 半导体材料 |
| 公开日期 | 2012-02-22 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22916]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Zhu QS ,Wu J ,Li CM ,et al. Conduction and Valence Band Discontinuities in Some New Semiconductor Heterojunctions[J]. journal of nanoscience and nanotechnology,2011,11(11 s1):9368-9383. |
| APA | Zhu QS ,Wu J ,Li CM ,&Wang ZG .(2011).Conduction and Valence Band Discontinuities in Some New Semiconductor Heterojunctions.journal of nanoscience and nanotechnology,11(11 s1),9368-9383. |
| MLA | Zhu QS ,et al."Conduction and Valence Band Discontinuities in Some New Semiconductor Heterojunctions".journal of nanoscience and nanotechnology 11.11 s1(2011):9368-9383. |
入库方式： OAI收割
来源：半导体研究所
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