High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO(2) and Al(2)O(3)/SiO(2) Films
文献类型:期刊论文
作者 | Zhang F (Zhang Feng) ; Sun GS (Sun Guosheng) ; Huang HL (Huang Huolin) ; Wu ZY (Wu Zhengyun) ; Wang L (Wang Lei) ; Zhao WS (Zhao Wanshun) ; Liu XF (Liu Xingfang) ; Yan GG (Yan Guoguo) ; Zheng L (Zheng Liu) ; Dong L (Dong Lin) ; Zeng YP (Zeng Yiping) |
刊名 | ieee electron device letters |
出版日期 | 2011 |
卷号 | 32期号:12页码:1722-1724 |
学科主题 | 半导体材料 |
公开日期 | 2012-02-22 |
源URL | [http://ir.semi.ac.cn/handle/172111/22909] |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Zhang F ,Sun GS ,Huang HL ,et al. High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO(2) and Al(2)O(3)/SiO(2) Films[J]. ieee electron device letters,2011,32(12):1722-1724. |
APA | Zhang F .,Sun GS .,Huang HL .,Wu ZY .,Wang L .,...&Zeng YP .(2011).High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO(2) and Al(2)O(3)/SiO(2) Films.ieee electron device letters,32(12),1722-1724. |
MLA | Zhang F ,et al."High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO(2) and Al(2)O(3)/SiO(2) Films".ieee electron device letters 32.12(2011):1722-1724. |
入库方式: OAI收割
来源:半导体研究所
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