中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO(2) and Al(2)O(3)/SiO(2) Films

文献类型:期刊论文

作者Zhang F (Zhang Feng) ; Sun GS (Sun Guosheng) ; Huang HL (Huang Huolin) ; Wu ZY (Wu Zhengyun) ; Wang L (Wang Lei) ; Zhao WS (Zhao Wanshun) ; Liu XF (Liu Xingfang) ; Yan GG (Yan Guoguo) ; Zheng L (Zheng Liu) ; Dong L (Dong Lin) ; Zeng YP (Zeng Yiping)
刊名ieee electron device letters
出版日期2011
卷号32期号:12页码:1722-1724
学科主题半导体材料
公开日期2012-02-22
源URL[http://ir.semi.ac.cn/handle/172111/22909]  
专题半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式
GB/T 7714
Zhang F ,Sun GS ,Huang HL ,et al. High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO(2) and Al(2)O(3)/SiO(2) Films[J]. ieee electron device letters,2011,32(12):1722-1724.
APA Zhang F .,Sun GS .,Huang HL .,Wu ZY .,Wang L .,...&Zeng YP .(2011).High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO(2) and Al(2)O(3)/SiO(2) Films.ieee electron device letters,32(12),1722-1724.
MLA Zhang F ,et al."High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO(2) and Al(2)O(3)/SiO(2) Films".ieee electron device letters 32.12(2011):1722-1724.

入库方式: OAI收割

来源:半导体研究所

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