A Theoretical Calculation of the Impact of GaN Cap and Al(x)Ga(1-x)N Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a GaN/Al(x)Ga(1-x)N/GaN Heterostructure
文献类型：期刊论文
| 作者 | Liu GP (Liu Guipeng) ; Wu J (Wu Ju) ; Lu YW (Lu Yanwu) ; Zhang BA (Zhang Biao) ; Li CM (Li Chengming) ; Sang L (Sang Ling) ; Song YF (Song Yafeng) ; Shi K (Shi Kai) ; Liu XL (Liu Xianglin) ; Yang SY (Yang Shaoyan) ; Zhu QS (Zhu Qinsheng) ; Wang ZG (Wang Zhanguo) |
| 刊名 | ieee transactions on electron devices
 |
| 出版日期 | 2011 |
| 卷号 | 58期号:12页码:4272-4275 |
| 学科主题 | 半导体材料 |
| 公开日期 | 2012-02-22 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22910]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Liu GP ,Wu J ,Lu YW ,et al. A Theoretical Calculation of the Impact of GaN Cap and Al(x)Ga(1-x)N Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a GaN/Al(x)Ga(1-x)N/GaN Heterostructure[J]. ieee transactions on electron devices,2011,58(12):4272-4275. |
| APA | Liu GP .,Wu J .,Lu YW .,Zhang BA .,Li CM .,...&Wang ZG .(2011).A Theoretical Calculation of the Impact of GaN Cap and Al(x)Ga(1-x)N Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a GaN/Al(x)Ga(1-x)N/GaN Heterostructure.ieee transactions on electron devices,58(12),4272-4275. |
| MLA | Liu GP ,et al."A Theoretical Calculation of the Impact of GaN Cap and Al(x)Ga(1-x)N Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a GaN/Al(x)Ga(1-x)N/GaN Heterostructure".ieee transactions on electron devices 58.12(2011):4272-4275. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。