Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition
文献类型：期刊论文
| 作者 | Li LG (Li Li-Gong) ; Liu SM (Liu Shu-Man) ; Luo S (Luo Shuai) ; Yang T (Yang Tao) ; Wang LJ (Wang Li-Jun) ; Liu FQ (Liu Feng-Qi) ; Ye XL (Ye Xiao-Ling) ; Xu B (Xu Bo) ; Wang ZG (Wang Zhan-Guo) |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2011 |
| 卷号 | 28期号:11页码:116802 |
| 学科主题 | 半导体材料 |
| 公开日期 | 2012-02-21 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22900]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Li LG ,Liu SM ,Luo S ,et al. Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition[J]. chinese physics letters,2011,28(11):116802. |
| APA | Li LG .,Liu SM .,Luo S .,Yang T .,Wang LJ .,...&Wang ZG .(2011).Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition.chinese physics letters,28(11),116802. |
| MLA | Li LG ,et al."Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition".chinese physics letters 28.11(2011):116802. |
入库方式： OAI收割
来源：半导体研究所
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