An InP-Based Dual-Depletion-Region Electroabsorption Modulator with Low Capacitance and Predicted High Bandwidth
文献类型：期刊论文
| 作者 | Shao YB (Shao Yong-Bo) ; Zhao LJ (Zhao Ling-Juan) ; Yu HY (Yu Hong-Yan) ; Qiu JF (Qiu Ji-Fang) ; Qiu YP (Qiu Ying-Ping) ; Pan JQ (Pan Jiao-Qing) ; Wang BJ (Wang Bao-Jun) ; Zhu HL (Zhu Hong-Liang) ; Wang W (Wang Wei) |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2011 |
| 卷号 | 28期号:11页码:114207 |
| 学科主题 | 半导体材料 |
| 公开日期 | 2012-02-21 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/22899]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Shao YB ,Zhao LJ ,Yu HY ,et al. An InP-Based Dual-Depletion-Region Electroabsorption Modulator with Low Capacitance and Predicted High Bandwidth[J]. chinese physics letters,2011,28(11):114207. |
| APA | Shao YB .,Zhao LJ .,Yu HY .,Qiu JF .,Qiu YP .,...&Wang W .(2011).An InP-Based Dual-Depletion-Region Electroabsorption Modulator with Low Capacitance and Predicted High Bandwidth.chinese physics letters,28(11),114207. |
| MLA | Shao YB ,et al."An InP-Based Dual-Depletion-Region Electroabsorption Modulator with Low Capacitance and Predicted High Bandwidth".chinese physics letters 28.11(2011):114207. |
入库方式： OAI收割
来源：半导体研究所
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