A generic numerical model for detection of terahertz radiation in MOS field-effect transistors
文献类型：期刊论文
| 作者 | Wang, YL ; Yan, ZF ; Zhu, JX ; Zhang, LN ; Lin, XN ; He, J ; Cao, JC ; Chan, MS |
| 刊名 | SOLID-STATE ELECTRONICS
 |
| 出版日期 | 2010 |
| 卷号 | 54期号:8页码:791-795 |
| 关键词 | 2-DIMENSIONAL ELECTRON FLUID CURRENT INSTABILITY RESONANT DETECTION INVERSION-LAYERS DC CURRENT |
| ISSN号 | 0038-1101 |
| 通讯作者 | He, J, Peking Univ, Inst Microelect, Sch Elect Engn & Comp Sci, TSRC, Beijing 100871, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Physics, Applied; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94630]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, YL,Yan, ZF,Zhu, JX,et al. A generic numerical model for detection of terahertz radiation in MOS field-effect transistors[J]. SOLID-STATE ELECTRONICS,2010,54(8):791-795. |
| APA | Wang, YL.,Yan, ZF.,Zhu, JX.,Zhang, LN.,Lin, XN.,...&Chan, MS.(2010).A generic numerical model for detection of terahertz radiation in MOS field-effect transistors.SOLID-STATE ELECTRONICS,54(8),791-795. |
| MLA | Wang, YL,et al."A generic numerical model for detection of terahertz radiation in MOS field-effect transistors".SOLID-STATE ELECTRONICS 54.8(2010):791-795. |
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