中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Simulation of Voltage SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling

文献类型:期刊论文

作者Gong, YF ; Song, ZT ; Ling, Y ; Liu, Y ; Li, YJ
刊名CHINESE PHYSICS LETTERS
出版日期2010
卷号27期号:6页码:68501-68501
关键词LOW RESET CURRENT
ISSN号0256-307X
通讯作者Gong, YF, Chinese Acad Sci, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
学科主题Physics, Multidisciplinary
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/94631]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Gong, YF,Song, ZT,Ling, Y,et al. Simulation of Voltage SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling[J]. CHINESE PHYSICS LETTERS,2010,27(6):68501-68501.
APA Gong, YF,Song, ZT,Ling, Y,Liu, Y,&Li, YJ.(2010).Simulation of Voltage SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling.CHINESE PHYSICS LETTERS,27(6),68501-68501.
MLA Gong, YF,et al."Simulation of Voltage SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling".CHINESE PHYSICS LETTERS 27.6(2010):68501-68501.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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