Performance improvement of phase change memory cell by using a cerium dioxide buffer layer
文献类型：期刊论文
| 作者 | Shang, F ; Zhai, JW ; Song, S ; Song, ZT ; Wang, CZ |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2010 |
| 卷号 | 96期号:20页码:203504-203504 |
| 关键词 | RANDOM-ACCESS MEMORY THIN-FILMS CONDUCTIVITY TECHNOLOGY STORAGE |
| ISSN号 | 0003-6951 |
| 通讯作者 | Shang, F, Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China |
| 学科主题 | Physics ; Applied |
| 收录类别 | SCI |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94636]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Shang, F,Zhai, JW,Song, S,et al. Performance improvement of phase change memory cell by using a cerium dioxide buffer layer[J]. APPLIED PHYSICS LETTERS,2010,96(20):203504-203504. |
| APA | Shang, F,Zhai, JW,Song, S,Song, ZT,&Wang, CZ.(2010).Performance improvement of phase change memory cell by using a cerium dioxide buffer layer.APPLIED PHYSICS LETTERS,96(20),203504-203504. |
| MLA | Shang, F,et al."Performance improvement of phase change memory cell by using a cerium dioxide buffer layer".APPLIED PHYSICS LETTERS 96.20(2010):203504-203504. |
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