中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
WAVELENGTH EXTENDED InGaAs/InP PHOTODETECTOR STRUCTURES WITH LATTICE MISMATCH UP TO 2.6%

文献类型:期刊论文

作者Gu, Y ; Li, C ; Wang, K ; Li, HSBY ; Li, YY ; Zhang, YG(张永刚)
刊名JOURNAL OF INFRARED AND MILLIMETER WAVES
出版日期2010
卷号29期号:2页码:81-86
关键词BUFFER
ISSN号1001-9014
通讯作者Gu, Y, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
学科主题Optics
收录类别SCI
语种英语
公开日期2012-03-24
源URL[http://ir.sim.ac.cn/handle/331004/94643]  
专题上海微系统与信息技术研究所_功能材料与器件_期刊论文
推荐引用方式
GB/T 7714
Gu, Y,Li, C,Wang, K,et al. WAVELENGTH EXTENDED InGaAs/InP PHOTODETECTOR STRUCTURES WITH LATTICE MISMATCH UP TO 2.6%[J]. JOURNAL OF INFRARED AND MILLIMETER WAVES,2010,29(2):81-86.
APA Gu, Y,Li, C,Wang, K,Li, HSBY,Li, YY,&Zhang, YG.(2010).WAVELENGTH EXTENDED InGaAs/InP PHOTODETECTOR STRUCTURES WITH LATTICE MISMATCH UP TO 2.6%.JOURNAL OF INFRARED AND MILLIMETER WAVES,29(2),81-86.
MLA Gu, Y,et al."WAVELENGTH EXTENDED InGaAs/InP PHOTODETECTOR STRUCTURES WITH LATTICE MISMATCH UP TO 2.6%".JOURNAL OF INFRARED AND MILLIMETER WAVES 29.2(2010):81-86.

入库方式: OAI收割

来源:上海微系统与信息技术研究所

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