Improved Performance of Phase Change Memory Cell with Strontium Titanate and Barium Titanate Buffer Layer
文献类型：期刊论文
| 作者 | Shang, F ; Zhai, JW ; Song, SN ; Song, ZT ; Wang, CZ |
| 刊名 | JAPANESE JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2010 |
| 卷号 | 49期号:9页码:94202-94202 |
| 关键词 | SRTIO3 THIN-FILMS CONDUCTIVITY STORAGE |
| ISSN号 | 0021-4922 |
| 通讯作者 | Shang, F, Tongji Univ, Funct Mat Res Lab, Shanghai 20092, Peoples R China |
| 学科主题 | Physics, Applied |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94647]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Shang, F,Zhai, JW,Song, SN,et al. Improved Performance of Phase Change Memory Cell with Strontium Titanate and Barium Titanate Buffer Layer[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2010,49(9):94202-94202. |
| APA | Shang, F,Zhai, JW,Song, SN,Song, ZT,&Wang, CZ.(2010).Improved Performance of Phase Change Memory Cell with Strontium Titanate and Barium Titanate Buffer Layer.JAPANESE JOURNAL OF APPLIED PHYSICS,49(9),94202-94202. |
| MLA | Shang, F,et al."Improved Performance of Phase Change Memory Cell with Strontium Titanate and Barium Titanate Buffer Layer".JAPANESE JOURNAL OF APPLIED PHYSICS 49.9(2010):94202-94202. |
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