Demonstration of Super-Collimation in SOI Photonic Crystal Fabricated by 0.13 mu m CMOS Technology
文献类型：期刊论文
| 作者 | Wu,AM ; Yang,ZF ; Lin,XL ; Jiang,XY ; Gan,FW ; Zhang,MA ; Wang,X ; Zou,SC |
| 刊名 | INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2
 |
| 出版日期 | 2010 |
| 期号 | 0页码:1319-1320 |
| 关键词 | WAVE-GUIDES |
| 通讯作者 | Wu, AM, 865 Changning Rd, Shanghai 200050, Peoples R China |
| 学科主题 | Engineering ; Electrical & Electronic; Nanoscience & Nanotechnology |
| 收录类别 | SCI |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94654]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wu,AM,Yang,ZF,Lin,XL,et al. Demonstration of Super-Collimation in SOI Photonic Crystal Fabricated by 0.13 mu m CMOS Technology[J]. INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2,2010(0):1319-1320. |
| APA | Wu,AM.,Yang,ZF.,Lin,XL.,Jiang,XY.,Gan,FW.,...&Zou,SC.(2010).Demonstration of Super-Collimation in SOI Photonic Crystal Fabricated by 0.13 mu m CMOS Technology.INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2(0),1319-1320. |
| MLA | Wu,AM,et al."Demonstration of Super-Collimation in SOI Photonic Crystal Fabricated by 0.13 mu m CMOS Technology".INEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2 .0(2010):1319-1320. |
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