Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy
文献类型：期刊论文
| 作者 | Ou,X ; DasKanungo,P ; Kogler,R ; Werner,P ; Gosele,U ; Skorupa,W ; Wang,X |
| 刊名 | NANO LETTERS
 |
| 出版日期 | 2010 |
| 卷号 | 10期号:1页码:171-175 |
| 关键词 | SILICON NANOWIRES PILE-UP PHOSPHORUS IMPURITIES INTERFACE TRANSPORT GERMANIUM DENSITY |
| ISSN号 | 1530-6984 |
| 通讯作者 | Ou, X, Max Planck Inst Microstruct Phys, Weinberg 2, D-06120 Halle, Germany |
| 学科主题 | Chemistry ; Multidisciplinary; Chemistry ; Physical; Nanoscience & Nanotechnology; Materials Science ; Multidisciplinary; Physics ; Applied; Physics ; Condensed Matter |
| 收录类别 | SCI |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94688]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Ou,X,DasKanungo,P,Kogler,R,et al. Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy[J]. NANO LETTERS,2010,10(1):171-175. |
| APA | Ou,X.,DasKanungo,P.,Kogler,R.,Werner,P.,Gosele,U.,...&Wang,X.(2010).Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy.NANO LETTERS,10(1),171-175. |
| MLA | Ou,X,et al."Carrier Profiling of Individual Si Nanowires by Scanning Spreading Resistance Microscopy".NANO LETTERS 10.1(2010):171-175. |
入库方式： OAI收割
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