Investigation on Silicon on Insulator Fabricated by Separation by Implanted Oxygen Layer Transfer
文献类型：期刊论文
| 作者 | Wei, X ; Wu, AM ; Wang, X ; Li, XY ; Ye, F ; Chen, J ; Chen, M ; Zhang, B ; Lin, CL ; Zhang, M ; Wang, X |
| 刊名 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY
 |
| 出版日期 | 2010 |
| 卷号 | 157期号:1页码:H81-H85 |
| 关键词 | LOW-DOSE SEPARATION BURIED-OXIDE THERMAL-OXIDATION FILM SOI WAFERS |
| ISSN号 | 0013-4651 |
| 通讯作者 | Wei, X, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Electrochemistry; Materials Science, Coatings & Films |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94689]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wei, X,Wu, AM,Wang, X,et al. Investigation on Silicon on Insulator Fabricated by Separation by Implanted Oxygen Layer Transfer[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY,2010,157(1):H81-H85. |
| APA | Wei, X.,Wu, AM.,Wang, X.,Li, XY.,Ye, F.,...&Wang, X.(2010).Investigation on Silicon on Insulator Fabricated by Separation by Implanted Oxygen Layer Transfer.JOURNAL OF THE ELECTROCHEMICAL SOCIETY,157(1),H81-H85. |
| MLA | Wei, X,et al."Investigation on Silicon on Insulator Fabricated by Separation by Implanted Oxygen Layer Transfer".JOURNAL OF THE ELECTROCHEMICAL SOCIETY 157.1(2010):H81-H85. |
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