Strain Stability and Carrier Mobility Enhancement in Strained Si on Relaxed SiGe-on-Insulator
文献类型：期刊论文
| 作者 | Ma, XB ; Liu, WL ; Liu, XY ; Du, XF ; Song, ZT ; Lin, CL ; Chu, PK |
| 刊名 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY
 |
| 出版日期 | 2010 |
| 卷号 | 157期号:1页码:H104-H108 |
| 关键词 | N-MOSFETS SILICON FABRICATION TECHNOLOGY LAYERS RELAXATION ELECTRON SIMOX SOI |
| ISSN号 | 0013-4651 |
| 通讯作者 | Ma, XB, Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China |
| 学科主题 | Electrochemistry; Materials Science, Coatings & Films |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94690]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Ma, XB,Liu, WL,Liu, XY,et al. Strain Stability and Carrier Mobility Enhancement in Strained Si on Relaxed SiGe-on-Insulator[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY,2010,157(1):H104-H108. |
| APA | Ma, XB.,Liu, WL.,Liu, XY.,Du, XF.,Song, ZT.,...&Chu, PK.(2010).Strain Stability and Carrier Mobility Enhancement in Strained Si on Relaxed SiGe-on-Insulator.JOURNAL OF THE ELECTROCHEMICAL SOCIETY,157(1),H104-H108. |
| MLA | Ma, XB,et al."Strain Stability and Carrier Mobility Enhancement in Strained Si on Relaxed SiGe-on-Insulator".JOURNAL OF THE ELECTROCHEMICAL SOCIETY 157.1(2010):H104-H108. |
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