Enhance the split-gate flash cell performance by partially decoupling the SG oxide thickness from the tunnel oxide thickness
文献类型：期刊论文
| 作者 | Dong, YQ ; Kong, WR ; Do, N ; Wang, SL ; Lee, G |
| 刊名 | SOLID-STATE ELECTRONICS
 |
| 出版日期 | 2010 |
| 卷号 | 54期号:5页码:579-581 |
| 关键词 | MEMORY MODEL |
| ISSN号 | 0038-1101 |
| 通讯作者 | Dong, YQ, Grace Semicond Mfg Corp, Shanghai 201203, Peoples R China |
| 学科主题 | Engineering, Electrical & Electronic; Physics, Applied; Physics, Condensed Matter |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94694]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Dong, YQ,Kong, WR,Do, N,et al. Enhance the split-gate flash cell performance by partially decoupling the SG oxide thickness from the tunnel oxide thickness[J]. SOLID-STATE ELECTRONICS,2010,54(5):579-581. |
| APA | Dong, YQ,Kong, WR,Do, N,Wang, SL,&Lee, G.(2010).Enhance the split-gate flash cell performance by partially decoupling the SG oxide thickness from the tunnel oxide thickness.SOLID-STATE ELECTRONICS,54(5),579-581. |
| MLA | Dong, YQ,et al."Enhance the split-gate flash cell performance by partially decoupling the SG oxide thickness from the tunnel oxide thickness".SOLID-STATE ELECTRONICS 54.5(2010):579-581. |
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