Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well
文献类型：期刊论文
| 作者 | Cao, M ; Wu, HZ ; Lao, YF ; Cao, CF ; Liu, C ; Hu, GJ |
| 刊名 | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| 出版日期 | 2010 |
| 卷号 | 491期号:1-2页码:595-598 |
| 关键词 | SUPERLATTICES LUMINESCENCE EXCITONS HETEROSTRUCTURES ENHANCEMENT DEPOSITION EPITAXY GAN |
| ISSN号 | 0925-8388 |
| 通讯作者 | Cao, M, Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai Inst Tech Phys, 500 YuTian RD, Shanghai 200083, Peoples R China |
| 学科主题 | Chemistry, Physical; Materials Science, Multidisciplinary; Metallurgy & Metallurgical Engineering |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2012-03-24 |
| 源URL | [http://ir.sim.ac.cn/handle/331004/94701]  |
| 专题 | 上海微系统与信息技术研究所_功能材料与器件_期刊论文 |
| 推荐引用方式 GB/T 7714 | Cao, M,Wu, HZ,Lao, YF,et al. Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2010,491(1-2):595-598. |
| APA | Cao, M,Wu, HZ,Lao, YF,Cao, CF,Liu, C,&Hu, GJ.(2010).Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well.JOURNAL OF ALLOYS AND COMPOUNDS,491(1-2),595-598. |
| MLA | Cao, M,et al."Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well".JOURNAL OF ALLOYS AND COMPOUNDS 491.1-2(2010):595-598. |
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